WSD30L120DN56 MOSFET Datasheet & Specifications
P-Channel
DFN5X6-8
Logic-Level
Winsok Semicon
Vds Max
30V
Id Max
120A
Rds(on)
6.8mΩ@4.5V
Vgs(th)
2.5V
Quick Reference
The WSD30L120DN56 is an P-Channel MOSFET in a DFN5X6-8 package, manufactured by Winsok Semicon. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 120A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Winsok Semicon | Original Manufacturer |
| Package | DFN5X6-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 120A | Max current handling |
| Power Dissipation (Pd) | 78W | Max thermal limit |
| On-Resistance (Rds(on)) | 6.8mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 135nC@10V | Switching energy |
| Input Capacitance (Ciss) | 6.1nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.13nF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| WSD30L120ADN56 | P-Channel | DFN5X6-8 | 30V | 120A | 5mΩ@10V | 2.5V | Winsok Semicon 📄 PDF |