WSD27N10DN56 MOSFET Datasheet & Specifications
P-Channel
DFN5x6C-8-EP
Logic-Level
Winsok Semicon
Vds Max
100V
Id Max
18A
Rds(on)
50mΩ@10V;80mΩ@10V
Vgs(th)
2.5V
Quick Reference
The WSD27N10DN56 is an P-Channel MOSFET in a DFN5x6C-8-EP package, manufactured by Winsok Semicon. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 18A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Winsok Semicon | Original Manufacturer |
| Package | DFN5x6C-8-EP | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 18A | Max current handling |
| Power Dissipation (Pd) | 37.5W | Max thermal limit |
| On-Resistance (Rds(on)) | 50mΩ@10V;80mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 14nC@10V;30nC@10V | Switching energy |
| Input Capacitance (Ciss) | 800pF;1.41nF | Internal gate capacitance |
| Output Capacitance (Coss) | 120pF;85pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||