WPM1481-6/TR MOSFET Datasheet & Specifications
P-Channel
DFN2x2-6L
Logic-Level
WILLSEMI
Vds Max
12V
Id Max
5.1A
Rds(on)
28mΩ@4.5V
Vgs(th)
900mV
Quick Reference
The WPM1481-6/TR is an P-Channel MOSFET in a DFN2x2-6L package, manufactured by WILLSEMI. It supports a drain-source breakdown voltage of 12V and a continuous drain current of 5.1A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | WILLSEMI | Original Manufacturer |
| Package | DFN2x2-6L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 12V | Max breakdown voltage |
| Continuous Drain Current (Id) | 5.1A | Max current handling |
| Power Dissipation (Pd) | 1.9W | Max thermal limit |
| On-Resistance (Rds(on)) | 28mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 900mV | Voltage required to turn on |
| Gate Charge (Qg) | 44.5nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 1.88nF | Internal gate capacitance |
| Output Capacitance (Coss) | 437pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||