WMB020N03LG4 MOSFET Datasheet & Specifications

N-Channel PDFN-8L(5x6) Logic-Level Wayon
Vds Max
30V
Id Max
125A
Rds(on)
1.4mΩ@10V;2mΩ@4.5V
Vgs(th)
1.6V

Quick Reference

The WMB020N03LG4 is an N-Channel MOSFET in a PDFN-8L(5x6) package, manufactured by Wayon. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 125A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerWayonOriginal Manufacturer
PackagePDFN-8L(5x6)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)125AMax current handling
Power Dissipation (Pd)50WMax thermal limit
On-Resistance (Rds(on))1.4mΩ@10V;2mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.6VVoltage required to turn on
Gate Charge (Qg)29.5nC@10VSwitching energy
Input Capacitance (Ciss)2.08nFInternal gate capacitance
Output Capacitance (Coss)1.09nFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
XRS250N03C N-Channel PDFN-8L(5x6) 30V 250A 0.7mΩ@10V 1.6V
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XRS230N03C N-Channel PDFN-8L(5x6) 30V 230A 0.8mΩ@10V 1.6V
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XRS225N04LF N-Channel PDFN-8L(5x6) 40V 225A 0.75mΩ@10V 1.7V
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XRS225N04F N-Channel PDFN-8L(5x6) 40V 225A 1.1mΩ@10V 1.8V
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XRS140N04F N-Channel PDFN-8L(5x6) 40V 140A 1.65mΩ@10V 1.7V
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