VT6M1T2CR MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SMD-6P
Logic-Level
ROHM
Vds Max
20V
Id Max
100mA
Rds(on)
2.5Ω@4.5V;2.5Ω@-4.5V
Vgs(th)
1V
Quick Reference
The VT6M1T2CR is a Dual N/P-Channel in a SMD-6P package, manufactured by ROHM. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 100mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | SMD-6P | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 100mA | Max current handling |
| Power Dissipation (Pd) | 150mW | Max thermal limit |
| On-Resistance (Rds(on)) | 2.5Ω@4.5V;2.5Ω@-4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 7.1pF;15pF | Internal gate capacitance |
| Output Capacitance (Coss) | 3.3pF;4pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |