UMX3N Datasheet & Equivalents
NPN
SOT-363
General Purpose
JSCJ
VCEO
50V
Ic Max
150mA
Pd Max
150mW
hFE Gain
120
Quick Reference
The UMX3N is a NPN bipolar junction transistor in a SOT-363 package, manufactured by JSCJ. It supports a breakdown voltage of 50V and continuous collector current of 150mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSCJ | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 50V | Max breakdown voltage |
| Collector Current (Ic) | 150mA | Max current handling |
| Power Dissipation (Pd) | 150mW | Max thermal limit |
| DC Current Gain (hFE) | 120 | Base signal amplification ratio |
| Transition Frequency (fT) | 180MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 400mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 7V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| UMX1N | NPN | SOT-363 | 50V | 150mA | 120 | 200mW | YANGJIE 📄 PDF |
| UMX1N(RANGE:120-560) | NPN | SOT-363 | 50V | 150mA | 120 | 150mW | JSCJ 📄 PDF |