TSM5055DCR MOSFET Array Datasheet & Equivalents
N-Channel Array
PDFN-8(5x6)
Logic-Level
Taiwan Semiconductor
Vds Max
30V
Id Max
20A
Rds(on)
14.9mΩ@4.5V
Vgs(th)
2.5V
Quick Reference
The TSM5055DCR is a N-Channel Array in a PDFN-8(5x6) package, manufactured by Taiwan Semiconductor. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 20A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Taiwan Semiconductor | Original Manufacturer |
| Package | PDFN-8(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 20A | Max current handling |
| Power Dissipation (Pd) | 69W | Max thermal limit |
| On-Resistance (Rds(on)) | 14.9mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 49nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.55nF | Internal gate capacitance |
| Output Capacitance (Coss) | 388pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| TSM110NB04LDCR RLG | N-Channel Array | PDFN-8(5x6) | 40V | 48A | 16mΩ@4.5V | 2.5V | Taiwan Semico... 📄 PDF |
| TSM110NB04LDCR | N-Channel Array | PDFN-8(5x6) | 40V | 48A | 16mΩ@4.5V | 2.5V | Taiwan Semico... 📄 PDF |
| TSM150NB04LDCR RLG | N-Channel Array | PDFN-8(5x6) | 40V | 37A | 19mΩ@4.5V | 2.5V | Taiwan Semico... 📄 PDF |
| TSM250NB06LDCR RLG | N-Channel Array | PDFN-8(5x6) | 60V | 29A | 28mΩ@4.5V | 2.5V | Taiwan Semico... 📄 PDF |
| TSM250NB06LDCR | N-Channel Array | PDFN-8(5x6) | 60V | 29A | 28mΩ@4.5V | 2.5V | Taiwan Semico... 📄 PDF |