TSM250N02DCQ MOSFET Array Datasheet & Equivalents
N-Channel Array
TDFN-6(2x2)
Logic-Level
Taiwan Semiconductor
Vds Max
20V
Id Max
5.8A
Rds(on)
55mΩ@1.8V
Vgs(th)
800mV
Quick Reference
The TSM250N02DCQ is a N-Channel Array in a TDFN-6(2x2) package, manufactured by Taiwan Semiconductor. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 5.8A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Taiwan Semiconductor | Original Manufacturer |
| Package | TDFN-6(2x2) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 5.8A | Max current handling |
| Power Dissipation (Pd) | 620mW | Max thermal limit |
| On-Resistance (Rds(on)) | 55mΩ@1.8V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 800mV | Voltage required to turn on |
| Gate Charge (Qg) | 7.7nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 775pF | Internal gate capacitance |
| Output Capacitance (Coss) | 85pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| TSM250N02DCQ RFG | N-Channel Array | TDFN-6(2x2) | 20V | 5.8A | 55mΩ@1.8V | 800mV | Taiwan Semico... 📄 PDF |