TSM200N03DPQ33 RGG MOSFET Array Datasheet & Equivalents
N-Channel Array
PDFN-8(3x3)
Logic-Level
Taiwan Semiconductor
Vds Max
30V
Id Max
20A
Rds(on)
30mΩ@4.5V
Vgs(th)
2.5V
Quick Reference
The TSM200N03DPQ33 RGG is a N-Channel Array in a PDFN-8(3x3) package, manufactured by Taiwan Semiconductor. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 20A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Taiwan Semiconductor | Original Manufacturer |
| Package | PDFN-8(3x3) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 20A | Max current handling |
| Power Dissipation (Pd) | 20W | Max thermal limit |
| On-Resistance (Rds(on)) | 30mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 4.1nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | 55pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||