TSM110NB04DCR RLG MOSFET Array Datasheet & Equivalents
N-Channel Array
PDFN-8(5x6)
Standard Power
Taiwan Semiconductor
Vds Max
40V
Id Max
48A
Rds(on)
17.2mΩ@7V
Vgs(th)
4V
Quick Reference
The TSM110NB04DCR RLG is a N-Channel Array in a PDFN-8(5x6) package, manufactured by Taiwan Semiconductor. Each channel supports a drain-source breakdown voltage of 40V and a continuous drain current of 48A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Taiwan Semiconductor | Original Manufacturer |
| Package | PDFN-8(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 48A | Max current handling |
| Power Dissipation (Pd) | 48W | Max thermal limit |
| On-Resistance (Rds(on)) | 17.2mΩ@7V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 25nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.506nF | Internal gate capacitance |
| Output Capacitance (Coss) | 144pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| TSM110NB04LDCR RLG | N-Channel Array | PDFN-8(5x6) | 40V | 48A | 16mΩ@4.5V | 2.5V | Taiwan Semico... 📄 PDF |
| TSM110NB04LDCR | N-Channel Array | PDFN-8(5x6) | 40V | 48A | 16mΩ@4.5V | 2.5V | Taiwan Semico... 📄 PDF |