TQM250NB06DCR RLG MOSFET Array Datasheet & Equivalents
N-Channel Array
PDFNU-8(5x6)
Standard Power
Taiwan Semiconductor
Vds Max
60V
Id Max
30A
Rds(on)
31.6mΩ@7V
Vgs(th)
3.8V
Quick Reference
The TQM250NB06DCR RLG is a N-Channel Array in a PDFNU-8(5x6) package, manufactured by Taiwan Semiconductor. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 30A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Taiwan Semiconductor | Original Manufacturer |
| Package | PDFNU-8(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 30A | Max current handling |
| Power Dissipation (Pd) | 58W | Max thermal limit |
| On-Resistance (Rds(on)) | 31.6mΩ@7V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.8V | Voltage required to turn on |
| Gate Charge (Qg) | 24nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.398nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||