TPN2R703NL,L1Q(ES) MOSFET Datasheet & Specifications
N-Channel
PDFN-8L(3x3)
Logic-Level
ElecSuper
Vds Max
30V
Id Max
80A
Rds(on)
2.4mΩ@10V;3.6mΩ@4.5V
Vgs(th)
1.6V
Quick Reference
The TPN2R703NL,L1Q(ES) is an N-Channel MOSFET in a PDFN-8L(3x3) package, manufactured by ElecSuper. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 80A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ElecSuper | Original Manufacturer |
| Package | PDFN-8L(3x3) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 80A | Max current handling |
| Power Dissipation (Pd) | 33.7W | Max thermal limit |
| On-Resistance (Rds(on)) | 2.4mΩ@10V;3.6mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.6V | Voltage required to turn on |
| Gate Charge (Qg) | 67nC@10V | Switching energy |
| Input Capacitance (Ciss) | 3.767nF | Internal gate capacitance |
| Output Capacitance (Coss) | 442pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SP30N02BNJ | N-Channel | PDFN-8L(3x3) | 30V | 80A | 2.5mΩ@10V 4.5mΩ@4.5V |
1.7V | Siliup 📄 PDF |