TPN2R203NC,L1Q(M MOSFET Datasheet & Specifications
N-Channel
TSON-8(3.1x3.1)
Logic-Level
TOSHIBA
Vds Max
30V
Id Max
45A
Rds(on)
2.2mΩ@10V
Vgs(th)
2.3V
Quick Reference
The TPN2R203NC,L1Q(M is an N-Channel MOSFET in a TSON-8(3.1x3.1) package, manufactured by TOSHIBA. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 45A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | TSON-8(3.1x3.1) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 45A | Max current handling |
| Power Dissipation (Pd) | 42W | Max thermal limit |
| On-Resistance (Rds(on)) | 2.2mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.3V | Voltage required to turn on |
| Gate Charge (Qg) | 34nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.23nF | Internal gate capacitance |
| Output Capacitance (Coss) | 650pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||