TPLBTN560Y3T1G Transistor Datasheet & Specifications

NPN BJT | TECH PUBLIC

NPNSOT-89-3General Purpose
VCEO
60V
Ic Max
5.2A
Pd Max
500mW
Gain
520@0.5A,2V

Quick Reference

The TPLBTN560Y3T1G is a NPN bipolar transistor in a SOT-89-3 package. This datasheet provides complete specifications including 60V breakdown voltage and 5.2A continuous collector current. Download the TPLBTN560Y3T1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTECH PUBLICOriginal Manufacturer
PackageSOT-89-3Physical mounting
VCEO60VBreakdown voltage
IC Max5.2ACollector current
Pd Max500mWPower dissipation
Gain520@0.5A,2VDC current gain
Frequency30MHzTransition speed
VCEsat35mV@0.5A,0.05ASaturation voltage
Vebo5VEmitter-Base voltage
Temp-Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
PBSS304NXNPNSOT-89-360V5.2A500mW
TPBT60N5T3NPNSOT-89-360V5.2A500mW
TPZXTN19055DZTANPNSOT-89-360V5.2A500mW
2SC5566-TPNPNSOT-89-360V5.2A500mW
2SD1616AGNPNSOT-89-360V1A500mW
ZXTN2010ZTA-CNNPNSOT-89-360V4.5A1W