TPH4R50ANH1,LQ(MW MOSFET Datasheet & Specifications
N-Channel
SOP-8-EP-5.0mm
High-Current
TOSHIBA
Vds Max
100V
Id Max
60A
Rds(on)
4.5mΩ@10V
Vgs(th)
4V
Quick Reference
The TPH4R50ANH1,LQ(MW is an N-Channel MOSFET in a SOP-8-EP-5.0mm package, manufactured by TOSHIBA. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 60A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | SOP-8-EP-5.0mm | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 60A | Max current handling |
| Power Dissipation (Pd) | 78W | Max thermal limit |
| On-Resistance (Rds(on)) | 4.5mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 58nC@10V | Switching energy |
| Input Capacitance (Ciss) | 5.2nF | Internal gate capacitance |
| Output Capacitance (Coss) | 700pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||