TPH1R403NL,L1Q(M MOSFET Datasheet & Specifications

N-Channel DFN-8(5x6) Logic-Level TOSHIBA
Vds Max
30V
Id Max
150A
Rds(on)
2.1mΩ@4.5V
Vgs(th)
2.3V

Quick Reference

The TPH1R403NL,L1Q(M is an N-Channel MOSFET in a DFN-8(5x6) package, manufactured by TOSHIBA. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 150A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageDFN-8(5x6)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)150AMax current handling
Power Dissipation (Pd)64WMax thermal limit
On-Resistance (Rds(on))2.1mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2.3VVoltage required to turn on
Gate Charge (Qg)46nC@10VSwitching energy
Input Capacitance (Ciss)4.4nFInternal gate capacitance
Output Capacitance (Coss)1.8nFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
CMSA011N03 N-Channel DFN-8(5x6) 30V 185A 0.96mΩ@10V 2V
DON220N03T N-Channel DFN-8(5x6) 30V 220A 1.2mΩ@10V 2V
DOINGTER 📄 PDF
DON210N03T N-Channel DFN-8(5x6) 30V 210A 1.3mΩ@10V 2.5V
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CSD18540Q5B(TOKMAS) N-Channel DFN-8(5x6) 60V 200A 2.3mΩ 2.5V
Tokmas 📄 PDF