TMG0069N04DF MOSFET Datasheet & Specifications

N-Channel PDFN-8L(3x3) Logic-Level Tritech-MOS
Vds Max
40V
Id Max
60A
Rds(on)
6.9mΩ@10V
Vgs(th)
3V

Quick Reference

The TMG0069N04DF is an N-Channel MOSFET in a PDFN-8L(3x3) package, manufactured by Tritech-MOS. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 60A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTritech-MOSOriginal Manufacturer
PackagePDFN-8L(3x3)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)60AMax current handling
Power Dissipation (Pd)39WMax thermal limit
On-Resistance (Rds(on))6.9mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)5.8nC@4.5VSwitching energy
Input Capacitance (Ciss)690pFInternal gate capacitance
Output Capacitance (Coss)193pFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SP40N03GNJ N-Channel PDFN-8L(3x3) 40V 75A 2.9mΩ@10V
4.2mΩ@4.5V
1.5V
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