TK6A80E,S4X MOSFET Datasheet & Specifications
N-Channel
TO-220-3
High-Voltage
TOSHIBA
Vds Max
800V
Id Max
6A
Rds(on)
1.7Ω@10V
Vgs(th)
4V
Quick Reference
The TK6A80E,S4X is an N-Channel MOSFET in a TO-220-3 package, manufactured by TOSHIBA. It supports a drain-source breakdown voltage of 800V and a continuous drain current of 6A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | TO-220-3 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 800V | Max breakdown voltage |
| Continuous Drain Current (Id) | 6A | Max current handling |
| Power Dissipation (Pd) | 45W | Max thermal limit |
| On-Resistance (Rds(on)) | 1.7Ω@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 32nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.35nF | Internal gate capacitance |
| Output Capacitance (Coss) | 110pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||