TIP102G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNTO-220General Purpose
VCEO
100V
Ic Max
8A
Pd Max
2W
Gain
1000

Quick Reference

The TIP102G is a NPN bipolar transistor in a TO-220 package. This datasheet provides complete specifications including 100V breakdown voltage and 8A continuous collector current. Download the TIP102G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-220Physical mounting
VCEO100VBreakdown voltage
IC Max8ACollector current
Pd Max2WPower dissipation
Gain1000DC current gain
Frequency-Transition speed
VCEsat2.5VSaturation voltage
Vebo-Emitter-Base voltage
Temp-65โ„ƒ~+150โ„ƒ@(Tj)Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
D44H11GNPNTO-22080V10A70W
TIP41CNPNTO-220100V9A65W
TIP41CGNPNTO-220100V6A65W
D44H11NPNTO-22080V10A50W
TIP41CNPNTO-220100V9A65W
TIP31CNPNTO-220100V3A40W
TIP41CNPNTO-220100V9A65W
TIP111GNPNTO-22080V2A2W
TIP122NPNTO-220100V5A2W
TIP41CNPNTO-220100V9A65W