TC8220K6-G MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
DFN-12-EP(4x4)
Logic-Level
MICROCHIP
Vds Max
200V
Id Max
2.3A
Rds(on)
6Ω@10V;7Ω@10V
Vgs(th)
1V
Quick Reference
The TC8220K6-G is a Dual N/P-Channel in a DFN-12-EP(4x4) package, manufactured by MICROCHIP. Each channel supports a drain-source breakdown voltage of 200V and a continuous drain current of 2.3A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MICROCHIP | Original Manufacturer |
| Package | DFN-12-EP(4x4) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 200V | Max breakdown voltage |
| Continuous Drain Current (Id) | 2.3A | Max current handling |
| Power Dissipation (Pd) | - | Max thermal limit |
| On-Resistance (Rds(on)) | 6Ω@10V;7Ω@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 56pF | Internal gate capacitance |
| Output Capacitance (Coss) | 13pF;21pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||