TBC847B,LM Transistor Datasheet & Specifications

NPN BJT | TOSHIBA

NPNSOT-23General Purpose
VCEO
50V
Ic Max
150mA
Pd Max
320mW
Gain
200

Quick Reference

The TBC847B,LM is a NPN bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 50V breakdown voltage and 150mA continuous collector current. Download the TBC847B,LM datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO50VBreakdown voltage
IC Max150mACollector current
Pd Max320mWPower dissipation
Gain200DC current gain
Frequency100MHzTransition speed
VCEsat170mVSaturation voltage
Vebo6VEmitter-Base voltage
Temp-Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMBTA05(RANGE:100-400)NPNSOT-2360V500mA300mW
FMMT491ATANPNSOT-2340V1A500mW
BC817-16LT1GNPNSOT-2345V500mA225mW
BC817-40LT1GNPNSOT-2345V500mA225mW
MMBT3904-7-FNPNSOT-2340V200mA310mW
DNBT8105-7NPNSOT-2360V1A600mW
S9014NPNSOT-2345V100mA300mW
ZXTN2040FTANPNSOT-2340V1A310mW
FMMT493ATANPNSOT-2360V1A500mW
BC817-40Q-7-FNPNSOT-2345V500mA310mW