SVD1055SATR MOSFET Datasheet & Specifications
P-Channel
SOP-8
Standard Power
Hangzhou Silan Microelectronics
Vds Max
55V
Id Max
17A
Rds(on)
175mΩ@10V
Vgs(th)
4V
Quick Reference
The SVD1055SATR is an P-Channel MOSFET in a SOP-8 package, manufactured by Hangzhou Silan Microelectronics. It supports a drain-source breakdown voltage of 55V and a continuous drain current of 17A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Hangzhou Silan Microelectronics | Original Manufacturer |
| Package | SOP-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 55V | Max breakdown voltage |
| Continuous Drain Current (Id) | 17A | Max current handling |
| Power Dissipation (Pd) | 2W | Max thermal limit |
| On-Resistance (Rds(on)) | 175mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 450pF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |