SUD50P10-43L-GE3 MOSFET Datasheet & Specifications

P-Channel TO-252 Logic-Level VISHAY
Vds Max
100V
Id Max
9.2A
Rds(on)
43mΩ@10V
Vgs(th)
3V

Quick Reference

The SUD50P10-43L-GE3 is an P-Channel MOSFET in a TO-252 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 9.2A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerVISHAYOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)9.2AMax current handling
Power Dissipation (Pd)95WMax thermal limit
On-Resistance (Rds(on))43mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)54nC@10VSwitching energy
Input Capacitance (Ciss)4.6nFInternal gate capacitance
Output Capacitance (Coss)230pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

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