SUD50P08-25L-E3 MOSFET Datasheet & Specifications

P-Channel TO-252 Logic-Level VISHAY
Vds Max
80V
Id Max
12.5A
Rds(on)
25.2mΩ@10V
Vgs(th)
3V

Quick Reference

The SUD50P08-25L-E3 is an P-Channel MOSFET in a TO-252 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 80V and a continuous drain current of 12.5A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerVISHAYOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)80VMax breakdown voltage
Continuous Drain Current (Id)12.5AMax current handling
Power Dissipation (Pd)8.3WMax thermal limit
On-Resistance (Rds(on))25.2mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)55nC@4.5VSwitching energy
Input Capacitance (Ciss)4.7nFInternal gate capacitance
Output Capacitance (Coss)320pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

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