STW4N150 MOSFET Datasheet & Specifications
N-Channel
TO-247
High-Voltage
ST
Vds Max
1.5kV
Id Max
4A
Rds(on)
7ฮฉ@10V
Vgs(th)
5V
Quick Reference
The STW4N150 is an N-Channel MOSFET in a TO-247 package, manufactured by ST. It supports a drain-source breakdown voltage of 1.5kV and a continuous drain current of 4A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST | Original Manufacturer |
| Package | TO-247 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 1.5kV | Max breakdown voltage |
| Continuous Drain Current (Id) | 4A | Max current handling |
| Power Dissipation (Pd) | 160W | Max thermal limit |
| On-Resistance (Rds(on)) | 7ฮฉ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 5V | Voltage required to turn on |
| Gate Charge (Qg) | 50nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.3nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55โ~+150โ | Safe junction temperature range |