STP7NK80Z MOSFET Datasheet & Specifications

N-Channel TO-220 High-Voltage ST
Vds Max
800V
Id Max
5.2A
Rds(on)
1.8Ī©@10V
Vgs(th)
4.5V

Quick Reference

The STP7NK80Z is an N-Channel MOSFET in a TO-220 package, manufactured by ST. It supports a drain-source breakdown voltage of 800V and a continuous drain current of 5.2A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSTOriginal Manufacturer
PackageTO-220Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)800VMax breakdown voltage
Continuous Drain Current (Id)5.2AMax current handling
Power Dissipation (Pd)125WMax thermal limit
On-Resistance (Rds(on))1.8Ī©@10VResistance when turned fully on
Gate Threshold (Vgs(th))4.5VVoltage required to turn on
Gate Charge (Qg)56nC@10VSwitching energy
Input Capacitance (Ciss)1.138nFInternal gate capacitance
Output Capacitance (Coss)122pFInternal output capacitance
Operating Temp-55ā„ƒ~+150ā„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
STP15N80K5 N-Channel TO-220 800V 14A 375mΩ@10V 5V