STP3NK80Z MOSFET Datasheet & Specifications
N-Channel
TO-220
High-Voltage
ST
Vds Max
800V
Id Max
2.5A
Rds(on)
3.6ฮฉ@10V
Vgs(th)
3.75V
Quick Reference
The STP3NK80Z is an N-Channel MOSFET in a TO-220 package, manufactured by ST. It supports a drain-source breakdown voltage of 800V and a continuous drain current of 2.5A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST | Original Manufacturer |
| Package | TO-220 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 800V | Max breakdown voltage |
| Continuous Drain Current (Id) | 2.5A | Max current handling |
| Power Dissipation (Pd) | 70W | Max thermal limit |
| On-Resistance (Rds(on)) | 3.6ฮฉ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.75V | Voltage required to turn on |
| Gate Charge (Qg) | 19nC@10V | Switching energy |
| Input Capacitance (Ciss) | 485pF | Internal gate capacitance |
| Output Capacitance (Coss) | 57pF | Internal output capacitance |
| Operating Temp | -55โ~+150โ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| IRFBG30PBF | N-Channel | TO-220 | 1kV | 3.1A | 5ฮฉ@10V | 4V | VISHAY ๐ PDF |