STL15N65M5 MOSFET Datasheet & Specifications

N-Channel VDFN-8-Power High-Voltage ST
Vds Max
650V
Id Max
10A
Rds(on)
375mΩ@10V
Vgs(th)
5V

Quick Reference

The STL15N65M5 is an N-Channel MOSFET in a VDFN-8-Power package, manufactured by ST. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 10A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSTOriginal Manufacturer
PackageVDFN-8-PowerPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)650VMax breakdown voltage
Continuous Drain Current (Id)10AMax current handling
Power Dissipation (Pd)52WMax thermal limit
On-Resistance (Rds(on))375mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))5VVoltage required to turn on
Gate Charge (Qg)22nC@10VSwitching energy
Input Capacitance (Ciss)816pFInternal gate capacitance
Output Capacitance (Coss)23pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
No exact equivalents found in database.