STFW8N120K5 MOSFET Datasheet & Specifications

N-Channel TO-3PF-3 Logic-Level ST
Vds Max
1.2kV
Id Max
6A
Rds(on)
1.65Ω@10V
Vgs(th)
3V

Quick Reference

The STFW8N120K5 is an N-Channel MOSFET in a TO-3PF-3 package, manufactured by ST. It supports a drain-source breakdown voltage of 1.2kV and a continuous drain current of 6A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSTOriginal Manufacturer
PackageTO-3PF-3Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)1.2kVMax breakdown voltage
Continuous Drain Current (Id)6AMax current handling
Power Dissipation (Pd)48WMax thermal limit
On-Resistance (Rds(on))1.65Ω@10VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)13.7nC@960VSwitching energy
Input Capacitance (Ciss)505pFInternal gate capacitance
Output Capacitance (Coss)44pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
No exact equivalents found in database.