STF24N60DM2 MOSFET Datasheet & Specifications

N-Channel TO-220FP High-Voltage ST
Vds Max
600V
Id Max
18A
Rds(on)
200mΩ@10V
Vgs(th)
5V

Quick Reference

The STF24N60DM2 is an N-Channel MOSFET in a TO-220FP package, manufactured by ST. It supports a drain-source breakdown voltage of 600V and a continuous drain current of 18A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSTOriginal Manufacturer
PackageTO-220FPPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)600VMax breakdown voltage
Continuous Drain Current (Id)18AMax current handling
Power Dissipation (Pd)30WMax thermal limit
On-Resistance (Rds(on))200mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))5VVoltage required to turn on
Gate Charge (Qg)29nC@10VSwitching energy
Input Capacitance (Ciss)1.055nFInternal gate capacitance
Output Capacitance (Coss)56pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
STF33N60M2 N-Channel TO-220FP 600V 26A 125mΩ@10V 4V
STF21N90K5 N-Channel TO-220FP 900V 18.5A 299mΩ@10V 5V