STF18N60M2 MOSFET Datasheet & Specifications

N-Channel TO-220FP High-Voltage ST
Vds Max
600V
Id Max
13A
Rds(on)
280mΩ@10V
Vgs(th)
4V

Quick Reference

The STF18N60M2 is an N-Channel MOSFET in a TO-220FP package, manufactured by ST. It supports a drain-source breakdown voltage of 600V and a continuous drain current of 13A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSTOriginal Manufacturer
PackageTO-220FPPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)600VMax breakdown voltage
Continuous Drain Current (Id)13AMax current handling
Power Dissipation (Pd)25WMax thermal limit
On-Resistance (Rds(on))280mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)21.5nC@10VSwitching energy
Input Capacitance (Ciss)791pFInternal gate capacitance
Output Capacitance (Coss)40pFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
STF33N60M2 N-Channel TO-220FP 600V 26A 125mΩ@10V 4V