STF15NM65N MOSFET Datasheet & Specifications

N-Channel TO-220F-3 High-Voltage ST
Vds Max
650V
Id Max
12A
Rds(on)
380mΩ@10V
Vgs(th)
4V

Quick Reference

The STF15NM65N is an N-Channel MOSFET in a TO-220F-3 package, manufactured by ST. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 12A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSTOriginal Manufacturer
PackageTO-220F-3Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)650VMax breakdown voltage
Continuous Drain Current (Id)12AMax current handling
Power Dissipation (Pd)30WMax thermal limit
On-Resistance (Rds(on))380mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)33.3nC@10VSwitching energy
Input Capacitance (Ciss)983pFInternal gate capacitance
Output Capacitance (Coss)57pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
No exact equivalents found in database.