STF10P6F6 MOSFET Datasheet & Specifications
P-Channel
TO-220-3
Standard Power
ST
Vds Max
60V
Id Max
10A
Rds(on)
160mΩ@10V
Vgs(th)
4V
Quick Reference
The STF10P6F6 is an P-Channel MOSFET in a TO-220-3 package, manufactured by ST. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 10A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST | Original Manufacturer |
| Package | TO-220-3 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 10A | Max current handling |
| Power Dissipation (Pd) | 40W | Max thermal limit |
| On-Resistance (Rds(on)) | 160mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 6.4nC@10V | Switching energy |
| Input Capacitance (Ciss) | 340pF | Internal gate capacitance |
| Output Capacitance (Coss) | 40pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| IRF9640PBF-JSM | P-Channel | TO-220-3 | 200V | 15A | 340mΩ@10V | 4V | JSMSEMI 📄 PDF |