STD2NK100Z MOSFET Datasheet & Specifications

N-Channel TO-252(DPAK) High-Voltage ST
Vds Max
1kV
Id Max
1.85A
Rds(on)
8.5ฮฉ@10V
Vgs(th)
4.5V

Quick Reference

The STD2NK100Z is an N-Channel MOSFET in a TO-252(DPAK) package, manufactured by ST. It supports a drain-source breakdown voltage of 1kV and a continuous drain current of 1.85A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSTOriginal Manufacturer
PackageTO-252(DPAK)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)1kVMax breakdown voltage
Continuous Drain Current (Id)1.85AMax current handling
Power Dissipation (Pd)70WMax thermal limit
On-Resistance (Rds(on))8.5ฮฉ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4.5VVoltage required to turn on
Gate Charge (Qg)16nC@800VSwitching energy
Input Capacitance (Ciss)499pFInternal gate capacitance
Output Capacitance (Coss)53pFInternal output capacitance
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
STD3NK100Z N-Channel TO-252(DPAK) 1kV 2.5A 6ฮฉ@10V 4.5V