STB140NF55T4 MOSFET Datasheet & Specifications

N-Channel D2PAK High-Current ST
Vds Max
55V
Id Max
80A
Rds(on)
8mΩ@10V
Vgs(th)
4V

Quick Reference

The STB140NF55T4 is an N-Channel MOSFET in a D2PAK package, manufactured by ST. It supports a drain-source breakdown voltage of 55V and a continuous drain current of 80A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerSTOriginal Manufacturer
PackageD2PAKPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)55VMax breakdown voltage
Continuous Drain Current (Id)80AMax current handling
Power Dissipation (Pd)300WMax thermal limit
On-Resistance (Rds(on))8mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)142nC@10VSwitching energy
Input Capacitance (Ciss)5.3nFInternal gate capacitance
Output Capacitance (Coss)1nFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
IRF3205STRLPBF N-Channel D2PAK 55V 110A 8mΩ@10V 4V
Infineon 📄 PDF
IRFS7734TRLPBF N-Channel D2PAK 75V 183A 2.8mΩ@10V 3.7V
Infineon 📄 PDF