SSM6N357R,LF MOSFET Array Datasheet & Equivalents
N-Channel Array
TSOP-6F
Logic-Level
TOSHIBA
Vds Max
60V
Id Max
650mA
Rds(on)
2.4Ω@3V
Vgs(th)
2V
Quick Reference
The SSM6N357R,LF is a N-Channel Array in a TSOP-6F package, manufactured by TOSHIBA. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 650mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | TSOP-6F | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 650mA | Max current handling |
| Power Dissipation (Pd) | 1W | Max thermal limit |
| On-Resistance (Rds(on)) | 2.4Ω@3V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2V | Voltage required to turn on |
| Gate Charge (Qg) | 1.5nC@5V | Switching energy |
| Input Capacitance (Ciss) | 60pF | Internal gate capacitance |
| Output Capacitance (Coss) | 20pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |