SSM6N17FU(TE85L,F) MOSFET Array Datasheet & Equivalents
N-Channel Array
TSSOP-6(SC-88)SOT-363
Logic-Level
TOSHIBA
Vds Max
50V
Id Max
100mA
Rds(on)
40Ω@2.5V
Vgs(th)
1.5V
Quick Reference
The SSM6N17FU(TE85L,F) is a N-Channel Array in a TSSOP-6(SC-88)SOT-363 package, manufactured by TOSHIBA. Each channel supports a drain-source breakdown voltage of 50V and a continuous drain current of 100mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | TSSOP-6(SC-88)SOT-363 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 50V | Max breakdown voltage |
| Continuous Drain Current (Id) | 100mA | Max current handling |
| Power Dissipation (Pd) | 200mW | Max thermal limit |
| On-Resistance (Rds(on)) | 40Ω@2.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 7pF | Internal gate capacitance |
| Output Capacitance (Coss) | 7pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||