SSM6L807R,LF MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
TSOP-6-F
Logic-Level
TOSHIBA
Vds Max
30V
Id Max
4A
Rds(on)
157mΩ@1.8V
Vgs(th)
1.2V
Quick Reference
The SSM6L807R,LF is a Dual N/P-Channel in a TSOP-6-F package, manufactured by TOSHIBA. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 4A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | TSOP-6-F | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 4A | Max current handling |
| Power Dissipation (Pd) | 1.4W | Max thermal limit |
| On-Resistance (Rds(on)) | 157mΩ@1.8V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.2V | Voltage required to turn on |
| Gate Charge (Qg) | 6.74nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 480pF | Internal gate capacitance |
| Output Capacitance (Coss) | 90pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |