SSM6L61NU,LF MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
UDFN6
Logic-Level
TOSHIBA
Vds Max
20V
Id Max
4A
Rds(on)
25mΩ@4.5V;44mΩ@4.5V
Vgs(th)
1V;1.2V
Quick Reference
The SSM6L61NU,LF is a Dual N/P-Channel in a UDFN6 package, manufactured by TOSHIBA. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 4A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | UDFN6 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 4A | Max current handling |
| Power Dissipation (Pd) | 1W | Max thermal limit |
| On-Resistance (Rds(on)) | 25mΩ@4.5V;44mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V;1.2V | Voltage required to turn on |
| Gate Charge (Qg) | 3.6nC@4.5V;6.74nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 410pF;480pF | Internal gate capacitance |
| Output Capacitance (Coss) | 85pF;90pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||