SSM6L35FU(TE85L,F) MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
TSSOP-6(SC-88)SOT-363
Logic-Level
TOSHIBA
Vds Max
20V
Id Max
180mA
Rds(on)
44Ω@1.2V
Vgs(th)
1V
Quick Reference
The SSM6L35FU(TE85L,F) is a Dual N/P-Channel in a TSSOP-6(SC-88)SOT-363 package, manufactured by TOSHIBA. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 180mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | TSSOP-6(SC-88)SOT-363 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 180mA | Max current handling |
| Power Dissipation (Pd) | 200mW | Max thermal limit |
| On-Resistance (Rds(on)) | 44Ω@1.2V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 9.5pF | Internal gate capacitance |
| Output Capacitance (Coss) | 9.5pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||