SSM3K329R,LF MOSFET Datasheet & Specifications

N-Channel SOT-23F Logic-Level TOSHIBA
Vds Max
30V
Id Max
3.5A
Rds(on)
289mΩ@1.8V
Vgs(th)
1V

Quick Reference

The SSM3K329R,LF is an N-Channel MOSFET in a SOT-23F package, manufactured by TOSHIBA. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 3.5A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageSOT-23FPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)3.5AMax current handling
Power Dissipation (Pd)1WMax thermal limit
On-Resistance (Rds(on))289mΩ@1.8VResistance when turned fully on
Gate Threshold (Vgs(th))1VVoltage required to turn on
Gate Charge (Qg)1.5nC@4VSwitching energy
Input Capacitance (Ciss)123pFInternal gate capacitance
Output Capacitance (Coss)43pFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SSM3K324R N-Channel SOT-23F 30V 4A 109mΩ@1.8V 1V
TOSHIBA 📄 PDF