SSM3K318R,LF MOSFET Datasheet & Specifications

N-Channel SOT-23F Logic-Level TOSHIBA
Vds Max
60V
Id Max
2.5A
Rds(on)
145mΩ@4.5V
Vgs(th)
2.8V

Quick Reference

The SSM3K318R,LF is an N-Channel MOSFET in a SOT-23F package, manufactured by TOSHIBA. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 2.5A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageSOT-23FPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)2.5AMax current handling
Power Dissipation (Pd)2WMax thermal limit
On-Resistance (Rds(on))145mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2.8VVoltage required to turn on
Gate Charge (Qg)7nC@10VSwitching energy
Input Capacitance (Ciss)235pFInternal gate capacitance
Output Capacitance (Coss)31pFInternal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SSM3K341R N-Channel SOT-23F 60V 6A 69mΩ@4V 2.5V
TOSHIBA 📄 PDF
LF N-Channel SOT-23F 100V 3.5A 65mΩ@4.5V 2.5V
TOSHIBA 📄 PDF