SSM3J356R,LF MOSFET Datasheet & Specifications
P-Channel
SOT-23F
Logic-Level
TOSHIBA
Vds Max
60V
Id Max
2A
Rds(on)
400mΩ@4V
Vgs(th)
2V
Quick Reference
The SSM3J356R,LF is an P-Channel MOSFET in a SOT-23F package, manufactured by TOSHIBA. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 2A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | SOT-23F | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 2A | Max current handling |
| Power Dissipation (Pd) | 1W | Max thermal limit |
| On-Resistance (Rds(on)) | 400mΩ@4V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2V | Voltage required to turn on |
| Gate Charge (Qg) | 8.3nC@10V | Switching energy |
| Input Capacitance (Ciss) | 330pF | Internal gate capacitance |
| Output Capacitance (Coss) | 40pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |