SSM14N956L,EFF MOSFET Array Datasheet & Equivalents
N-Channel Array
DFN-14(3x3)
Logic-Level
TOSHIBA
Vds Max
12V
Id Max
20A
Rds(on)
1.5mΩ@3.8V
Vgs(th)
1.4V
Quick Reference
The SSM14N956L,EFF is a N-Channel Array in a DFN-14(3x3) package, manufactured by TOSHIBA. Each channel supports a drain-source breakdown voltage of 12V and a continuous drain current of 20A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TOSHIBA | Original Manufacturer |
| Package | DFN-14(3x3) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 12V | Max breakdown voltage |
| Continuous Drain Current (Id) | 20A | Max current handling |
| Power Dissipation (Pd) | 1.33W | Max thermal limit |
| On-Resistance (Rds(on)) | 1.5mΩ@3.8V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.4V | Voltage required to turn on |
| Gate Charge (Qg) | 76nC@4V | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||