SQUN700E-T1_GE3 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
-
High-Voltage
VISHAY
Vds Max
200V
Id Max
30A
Rds(on)
75mΩ@10V
Vgs(th)
3.5V
Quick Reference
The SQUN700E-T1_GE3 is a Dual N/P-Channel in a - package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 200V and a continuous drain current of 30A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | - | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 200V | Max breakdown voltage |
| Continuous Drain Current (Id) | 30A | Max current handling |
| Power Dissipation (Pd) | 50W | Max thermal limit |
| On-Resistance (Rds(on)) | 75mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.5V | Voltage required to turn on |
| Gate Charge (Qg) | 30.2nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.474nF | Internal gate capacitance |
| Output Capacitance (Coss) | 222pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||