SQS481ENW-T1_GE3 MOSFET Datasheet & Specifications
P-Channel
PowerPAK1212-8
Standard Power
VISHAY
Vds Max
150V
Id Max
4.7A
Rds(on)
1.095Ī©@10V
Vgs(th)
3.5V
Quick Reference
The SQS481ENW-T1_GE3 is an P-Channel MOSFET in a PowerPAK1212-8 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 150V and a continuous drain current of 4.7A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | PowerPAK1212-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 150V | Max breakdown voltage |
| Continuous Drain Current (Id) | 4.7A | Max current handling |
| Power Dissipation (Pd) | 62.5W | Max thermal limit |
| On-Resistance (Rds(on)) | 1.095Ī©@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.5V | Voltage required to turn on |
| Gate Charge (Qg) | 11nC@10V | Switching energy |
| Input Capacitance (Ciss) | 385pF | Internal gate capacitance |
| Output Capacitance (Coss) | 18pF | Internal output capacitance |
| Operating Temp | -55ā~+175ā | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SI7115DN-T1-GE3 | P-Channel | PowerPAK1212-8 | 150V | 8.9A | 295mĪ©@10V | 4V | VISHAY š PDF |