SQJ202EP-T2_GE3 MOSFET Array Datasheet & Equivalents
N-Channel Array
SO-8
Logic-Level
VISHAY
Vds Max
12V
Id Max
60A
Rds(on)
6.5mΩ@10V
Vgs(th)
2V
Quick Reference
The SQJ202EP-T2_GE3 is a N-Channel Array in a SO-8 package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 12V and a continuous drain current of 60A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | SO-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 12V | Max breakdown voltage |
| Continuous Drain Current (Id) | 60A | Max current handling |
| Power Dissipation (Pd) | 48W | Max thermal limit |
| On-Resistance (Rds(on)) | 6.5mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2V | Voltage required to turn on |
| Gate Charge (Qg) | 54nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.525nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.645nF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SQJ208EP-T1_GE3 | N-Channel Array | SO-8 | 40V | 60A | 11.73mΩ@4.5V | 2.4V | VISHAY 📄 PDF |