SQJ142EP-T1_GE3 MOSFET Datasheet & Specifications
N-Channel
PowerPAKSO-8L
High-Current
VISHAY
Vds Max
40V
Id Max
167A
Rds(on)
3.6mΩ@10V
Vgs(th)
3.5V
Quick Reference
The SQJ142EP-T1_GE3 is an N-Channel MOSFET in a PowerPAKSO-8L package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 167A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | PowerPAKSO-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 167A | Max current handling |
| Power Dissipation (Pd) | 191W | Max thermal limit |
| On-Resistance (Rds(on)) | 3.6mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.5V | Voltage required to turn on |
| Gate Charge (Qg) | 45nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.65nF | Internal gate capacitance |
| Output Capacitance (Coss) | 625pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SQJ138EP-T1_GE3 | N-Channel | PowerPAKSO-8L | 40V | 330A | 1.8mΩ@10V | 3.5V | VISHAY 📄 PDF |