SQD25N15-52_GE3 MOSFET Datasheet & Specifications
N-Channel
TO-252
Standard Power
VISHAY
Vds Max
150V
Id Max
25A
Rds(on)
52mΩ@10V
Vgs(th)
4V
Quick Reference
The SQD25N15-52_GE3 is an N-Channel MOSFET in a TO-252 package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 150V and a continuous drain current of 25A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 150V | Max breakdown voltage |
| Continuous Drain Current (Id) | 25A | Max current handling |
| Power Dissipation (Pd) | 107W | Max thermal limit |
| On-Resistance (Rds(on)) | 52mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 51nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.2nF | Internal gate capacitance |
| Output Capacitance (Coss) | 215pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |