SQD19P06-60L_GE3 MOSFET Datasheet & Specifications
P-Channel
DPAK(TO-252)
Logic-Level
VISHAY
Vds Max
60V
Id Max
20A
Rds(on)
100mΩ@4.5V
Vgs(th)
2.5V
Quick Reference
The SQD19P06-60L_GE3 is an P-Channel MOSFET in a DPAK(TO-252) package, manufactured by VISHAY. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 20A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | DPAK(TO-252) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 20A | Max current handling |
| Power Dissipation (Pd) | 46W | Max thermal limit |
| On-Resistance (Rds(on)) | 100mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 41nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.49nF | Internal gate capacitance |
| Output Capacitance (Coss) | 200pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||